SUD40N04-10A
v (br)dss (v) r ds(on) ( ) i d (a) a 0.010 @ v gs = 10 v 40 40 0.014 @ v gs = 4.5 v 40 d g s to-252 s gd top view drain connected to tab order number: SUD40N04-10A n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 40 gate-source voltage v gs 20 v t c = 25 c 40 a continuous drain current (t j = 175 c) t c = 100 c i d 40 a pulsed drain current i dm 100 a avalanche current i ar 30 repetitive avalanche energy b l = 0.1 mh e ar 45 mj power dissipation t c = 25 c p d 71 c w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol typical maximum unit t 10 sec. 15 18 junction-to-ambient d steady state r thja 40 50 c/w junction-to-case r thjc 1.75 2.1 c/w notes: a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. surface mounted on 1? fr4 board. n-channel 40 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 4 free datasheet http:///
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 32 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 32 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 32 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 40 a v gs = 10 v, i d = 40 a 0.0075 0.010 v gs = 10 v, i d = 40 a, t j = 125 c 0.012 0.016 v gs = 10 v, i d = 40 a, t j = 175 c 0.015 0.020 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 10 a 0.011 0.014 v gs = 4.5 v, i d = 10 a, t j = 125 c 0.018 0.022 v gs = 4.5 v, i d = 10 a, t j = 175 c 0.022 0.028 forward transconductance a g fs v ds = 15 v, i d = 40 a 20 40 s dynamic b input capacitance c iss 1700 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 370 pf reversen transfer capacitance c rss 145 total gate charge c q g 35 gate-source charge c q gs v ds = 20 v, v gs = 10 v, i d = 40 a 6 nc gate-drain charge c q gd ds gs d 8 turn-on delay time c t d(on) 14 30 rise time c t r v dd = 20 v, r l = 0.5 7.5 15 turn-off delay time c t d(off) v dd = 20 v, r l = 0.5 i d 40 a, v gen = 10 v, r g = 2.5 30 60 ns fall time c t f d gen g 14 30 source-drain ciode ratings and characteristics (t c = 25 c) b continuous current i s 40 pulsed current i sm 100 a forward voltage a v sd i f = 40 a, v gs = 0 v 1.0 1.50 v reverse recovery time t rr i f = 40 a, di/dt = 100 a/ s 30 60 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. www.freescale.net.cn 2 / 4 SUD40N04-10A n-channel 40 v (d-s) 175 c mosfet free datasheet http:///
0 30 60 90 120 0246810 0 500 1000 1500 2000 2500 3000 0 8 16 24 32 40 0 20 40 60 80 0 20406080100 0 4 8 12 16 20 0 102030405060 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 20 40 60 80 100 0123456 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ? ) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c ? 55 c 3 v t c = 125 c v gs = 20 v i d = 40 a v gs = 10 thru 6 v 5 v v gs = 10 v c iss c oss c rss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v 3 v www.freescale.net.cn 3 / 4 SUD40N04-10A n-channel 40 v (d-s) 175 c mosfet free datasheet http:///
(normalized) ? on-resistance ( r ds(on) ? ) 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0
t c = 25 c single pulse 0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 maximum avalanche and drain current vs. case t emperature t c ? ambient temperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 100 normalized effective transient thermal impedance 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 1 ms 10 ms 100 ms dc 10 s 100 s 10 1 www.freescale.net.cn 4 / 4 SUD40N04-10A n-channel 40 v (d-s) 175 c mosfet free datasheet http:///
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